Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
Identifieur interne : 000C91 ( Russie/Analysis ); précédent : 000C90; suivant : 000C92Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
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Abstract
The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6 T are presented. A specific feature of the structures is a coexistence of the two-dimensional (2D) and 3D states at the Fermi energy near the semiconductor surface. The dependence of the measured ZBA amplitude on the strength and orientation of the applied magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in the 2D layer, whereas the main contribution to the screening comes from 3D electrons.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states</title><author><name sortKey="Minkov, G M" uniqKey="Minkov G">G. M. Minkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083</wicri:regionArea><wicri:noRegion>Ekaterinburg 620083</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics and Astronomy, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland</s1></inist:fA14><country xml:lang="fr">Suisse</country><wicri:regionArea>Department of Physics and Astronomy, University of Basel, Klingelbergstrasse 82, CH-4056 Basel</wicri:regionArea><wicri:noRegion>CH-4056 Basel</wicri:noRegion></affiliation></author><author><name sortKey="Germanenko, A V" uniqKey="Germanenko A">A. V. Germanenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083</wicri:regionArea><wicri:noRegion>Ekaterinburg 620083</wicri:noRegion></affiliation></author><author><name sortKey="Negachev, S A" uniqKey="Negachev S">S. A. Negachev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083</wicri:regionArea><wicri:noRegion>Ekaterinburg 620083</wicri:noRegion></affiliation></author><author><name sortKey="Rut, O E" uniqKey="Rut O">O. E. Rut</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083</wicri:regionArea><wicri:noRegion>Ekaterinburg 620083</wicri:noRegion></affiliation></author><author><name sortKey="Sukhorukov, Eugene V" uniqKey="Sukhorukov E">Eugene V. Sukhorukov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083</wicri:regionArea><wicri:noRegion>Ekaterinburg 620083</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0238468</idno><date when="1999-05-15">1999-05-15</date><idno type="stanalyst">PASCAL 99-0238468 AIP</idno><idno type="RBID">Pascal:99-0238468</idno><idno type="wicri:Area/Main/Corpus">015169</idno><idno type="wicri:Area/Main/Repository">013F83</idno><idno type="wicri:Area/Russie/Extraction">000C91</idno></publicationStmt><seriesStmt><idno type="ISSN">0163-1829</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter</title><title level="j" type="main">Physical review. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron mobility</term><term>Experimental study</term><term>Fermi level</term><term>Galvanomagnetic effects</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Lead compounds</term><term>Semiconductor junctions</term><term>Theoretical study</term><term>Tunnel effect</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340G</term><term>7323H</term><term>7110P</term><term>7320</term><term>Etude expérimentale</term><term>Etude théorique</term><term>Plomb composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Etat interface</term><term>Effet tunnel</term><term>Jonction à semiconducteur</term><term>Niveau Fermi</term><term>Mobilité électron</term><term>Effet galvanomagnétique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6 T are presented. A specific feature of the structures is a coexistence of the two-dimensional (2D) and 3D states at the Fermi energy near the semiconductor surface. The dependence of the measured ZBA amplitude on the strength and orientation of the applied magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in the 2D layer, whereas the main contribution to the screening comes from 3D electrons.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0163-1829</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter</s0></fA03><fA05><s2>59</s2></fA05><fA06><s2>20</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states</s1></fA08><fA11 i1="01" i2="1"><s1>MINKOV (G. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>GERMANENKO (A. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>NEGACHEV (S. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>RUT (O. E.)</s1></fA11><fA11 i1="05" i2="1"><s1>SUKHORUKOV (Eugene V.)</s1></fA11><fA14 i1="01"><s1>Institute of Physics and Applied Mathematics, Ural University, Ekaterinburg 620083, Russia</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics and Astronomy, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland</s1></fA14><fA20><s1>13139-13146</s1></fA20><fA21><s1>1999-05-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0238468</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6 T are presented. A specific feature of the structures is a coexistence of the two-dimensional (2D) and 3D states at the Fermi energy near the semiconductor surface. The dependence of the measured ZBA amplitude on the strength and orientation of the applied magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in the 2D layer, whereas the main contribution to the screening comes from 3D electrons.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C40G</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C23</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A10</s0></fC02><fC02 i1="04" i2="3"><s0>001B70C20</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7340G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7323H</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7110P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7320</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Plomb composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Lead compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Effet tunnel</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Tunnel effect</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Jonction à semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor junctions</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Niveau Fermi</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Fermi level</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Mobilité électron</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Electron mobility</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Effet galvanomagnétique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Galvanomagnetic effects</s0></fC03><fN21><s1>144</s1></fN21><fN47 i1="01" i2="1"><s0>9919M000797</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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